8~12GHz 150W GaN MMIC

Semiconductors/MMICs/ICs

The HYPA08001200P52P from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 8000 to 12000 MHz. It provides an output power of 52 dBm (150 W),PAE of 40% and has a power gain of 24 dB under 50V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transisto


Specifications

  • Part Number:
  • Work Mode:
  • Saturated Power Output: dBm(typical), dBm(minimum)
  • PAE:
  • Power Gain:
  • Harmonica Suppression:
  • Integrated Method:
  • Power Supply:
  • Weight:
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